講授本科生必修課程電力電子器件與應用

承擔教學改革項目-未央書院理工融合課《電力電子器件與應用》的新課程建設

2023-2026，多端口電力電子變壓器解耦控制與振蕩抑制研究，國家自然科學基金面上項目，中國

2021-2022, 兆瓦級多端口電力電子變壓器，彙川技術，中國

2021-2022, IGBT功率模塊可靠性評估，上海三菱電梯，中國

2021-2022, 75kW多功能三端口電力電子變壓器，山東電科院，中國

2020-2021, 交直流混合的分布式可再生能源關鍵技術、核心裝備和工程示範研究，國家重點研發計劃（課題3），中國

2020-2023, SiC Based Modular Transformer-less MW-Scale Power Conditioning System and Control for Flexible Manufacturing Plants, Department of Energy, 美國

2018-2021, SiC based modular transformer-less MW-scale power conditioning system and control for flexible CHP system, Department of Energy, 美國

2017-2020, Multi-functional high-efficiency high-density medium voltage SiC based asynchronous microgrid power conditioning system module, Power America, 美國

2014-2017, Agile direct grid connection medium voltage 4.7-12.47 kV power converter for PV applications utilizing advanced WBG devices, Department of Energy, 美國

2016, Benchmark of Benefits of High Voltage SiC in Medium Voltage Power Distribution Grids, Oak Ridge National Laboratory, 美國

2016-2017, Topology Evaluation of Aircraft Electric Power Distribution System, Safran Company, 法國

國際期刊論文選

1)H. Li, Z. Gao, S. Ji, Y. Ma, F. Wang, “An inrush current limiting method for grid-connected converters considering grid voltage disturbances,” IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 10, no. 2, pp. 2608-2618, Apr. 2022.

2)X. Huang, S. Ji, C. Nie, D. Li, M. Lin, L. Tolbert, F. Wang, W. Giewont, “Comprehensive analysis and improvement methods of noise immunity of desat protection for high voltage SiC MOSFETs with high dv/dt,” IEEE Open Journal of Power Electronics, vol. 3, pp. 36-50, Dec. 2021.

3)B. Shi, S. Ji, Z. Zhao, Z. Yu, “Discrete-State Event-Driven Numerical Prototyping of Megawatt Solid-State Transformers and AC/DC Hybrid Microgrids,” IEEE Access, vol. 9, pp. 108329-108339, Jul. 2021.

4)S. Ji, X. Huang, J. Palmer, F. Wang, L. Tolbert, “Modular multilevel converter (MMC) modeling considering submodule voltage sensor noise,” IEEE Trans. Power Electron., vol. 36, no. 2, pp. 1215-1219, Feb. 2021.

5)S. Ji, L. Zhang, X. Huang, J. Palmer, F. Wang, L. Tolbert, “A novel voltage balancing control with dv/dt reduction for 10-kV SiC MOSFET-based medium voltage modular multilevel converter,” IEEE Trans. Power Electron., vol. 35, no. 11, pp. 12533-12543, Nov. 2020.

6)L. Zhang, S. Ji, S. Gu, X. Huang, J. Palmer, W. Giewont, F. Wang, L. Tolbert, “Design considerations for high-voltage-insulated gate drive power supply for 10-kV SiC MOSFET applied in medium-voltage converter,” IEEE Trans. Ind. Electron., vol. 68, no. 7, pp. 5712-5724, Jul. 2021.

7)P. Yao, X. Jiang, P. Xue, S. Ji, F. Wang, “Flux balancing control of ungapped nanocrystalline core-based transformer in dual active bridge converters,” IEEE Trans. Power Electron., vol. 35, no. 11, pp. 11463-11474, Nov. 2020.

8)S. Ji, F. Wang, L. Tolbert, T. Lu, Z. Zhao, H. Yu, “An FPGA based voltage balancing control for multi HV-IGBTs in series connection,” IEEE Trans. on Ind. Appl., vol. 54, no. 5, pp. 4640-4649, Sep. 2018.

9)S. Ji, M. Laitinen, X. Huang, J. Sun, W. Giewont, F. Wang, L. Tolbert, “Short circuit characterization and protection of 10 kV SiC MOSFET,” IEEE Trans. Power Electron., vol. 34, no. 2, pp. 1755-1764, Feb. 2019.

10)B. Shi, Z. Zhao, K. Li, G. Feng, S. Ji, J. Zhou, “Design methodology for optimal phase-shift modulation of non-inverting buck-boost converter,” Journal of Power Electronics., vol. 19, no. 5, pp. 1108-1121, Sep. 2019.

11)S. Ji, S. Zheng, F. Wang, L. M. Tolbert, “Temperature-dependent characterization, modeling and switching speed limitation analysis of third generation 10 kV SiC MOSFET,” IEEE Trans. Power Electron., vol. 33, no. 5, pp. 4317-4327, May. 2018.

12)S. Ji, T. Lu, Z. Zhao, H. Yu, L. Yuan, “Series-connected HV-IGBTs using active voltage balancing control with status feedback circuit,” IEEE Trans. Power Electron., vol. 30, no. 8, pp. 4165-4174, Aug. 2015.

13)S. Ji, T. Lu, Z. Zhao, H. Yu, L. Yuan, S. Yang, C. Secrest, “Physical model analysis during transient for series connected HVIGBTs,” IEEE Trans. Power Electron., vol. 29, no. 11, pp. 5727-5737, Nov. 2014.

14)T. Lu, Z. Zhao, H. Yu, S. Ji, L. Yuan, F. He. “Parameter design of three-level converter based on series connected HV-IGBTs,” IEEE Trans. on Ind. Appl., vol. 50, no. 6, pp. 3943-3954, Nov. 2014.

15)T. Lu, Z. Zhao, S. Ji, H. Yu, L. Yuan. “Active clamping circuit with status feedback for series-connected HV-IGBTs,” IEEE Trans. on Ind. Appl., vol. 50, no. 5, pp. 3579-3590, Sep. 2014.

16)S. Ji, Z. Zhao, T. Lu, L. Yuan, H. Yu. “HVIGBT physical model analysis during transient,” IEEE Trans. Power Electron., vol. 28, no. 5, pp. 2616-2624, May. 2013.

國際會議論文選

1)D. Li, X. Huang, S. Ji, C. Nie, F. Wang, L. Tolbert, “Controller design and implementation of a medium voltage (13.8 kV) modular multi-level converter for asynchronous microgrids,” IEEE Energy Conversion Congress and Exposition (ECCE), 2020, Detroit, MI.

2)X. Huang, S. Ji, D. LI, C. Nie, L. Tolbert, F. Wang, W. Giewont, “Analysis and gate driver design considerations of 10 kV SiC MOSFETs under flashover fault due to insulation failure,” IEEE Energy Conversion Congress and Exposition (ECCE), 2020, Detroit, MI.

3)X. Huang, S. Ji, D. Li, C. Nie, W. Giewont, L. Tolbert, F. Wang, “A test scheme for the comprehensive qualification of MMC submodule based on 10 kV SiC MOSFETs under high dv/dt,” European Conference on Power Electronics and Applications (EPE), 2020, Lyon, France.

4)S. Ji, J. Palmer, X. Huang, D. Li, W. Giewont, L. Tolbert, F. Wang, “Impact of submodule voltage sensor noise in 10 kV SiC MOSFET modular multilevel converters (MMCs) under high dv/dt environment,” IEEE Applied Power Electronics Conference and Exposition (APEC), 2020, New Orleans, LA, pp. 1089-1093.

5)D. Li, S. Ji, X. Huang, J. Palmer, F. Wang, L. Tolbert, “Controller development of an asynchronous microgrid power conditioning system (PCS) converter considering grid requirements,” IEEE Applied Power Electronics Conference and Exposition (APEC), 2020, New Orleans, LA, pp. 616-621.

6)J. Palmer, S. Ji, X. Huang, L. Zhang, W. Giewont, F. Wang, L. Tolbert, “Improving voltage sensor noise immunity in a high voltage and high dv/dt environment,” IEEE Applied Power Electronics Conference and Exposition (APEC), 2020, New Orleans, LA, pp. 107-113.

7)X. Huang, S. Ji, J. Palmer, L. Zhang, D. Li, F. Wang, L. Tolbert, W. Giewont, “A robust 10 kV SiC MOSFET gate driver with fast overcurrent protection demonstrated in a MMC submodule,” IEEE Applied Power Electronics Conference and Exposition (APEC), 2020, New Orleans, LA, pp. 1813-1820.

8)S. Ji, X. Huang, J. Palmer, L. Zhang, W. Giewont, F. Wang, L. Tolbert, “Medium Voltage (13.8 kV) Transformer-less Grid-Connected DC/AC Converter Design and Demonstration Using 10 kV SiC MOSFET with High Frequency,” IEEE Energy Conversion Congress and Exposition (ECCE), 2019, Baltimore, MD, pp. 1953-1959.

9)J. Palmer, S. Ji, X. Huang, L. Zhang, F. Wang, W. Giewont, L. Tolbert, “Testing and validation of 10 kV SiC MOSFET based 35 kVA MMC phase-leg for medium voltage (13.8 kV) grid,” IEEE Energy Conversion Congress and Exposition (ECCE), 2019, Baltimore, MD, pp. 2001-2006.

10)X. Huang, J. Palmer, S. Ji, L. Zhang, F. Wang, L. Tolbert, W. Giewont, “Design and testing of a modular multilevel converter submodule based on 10 kV SiC MOSFETs,” IEEE Energy Conversion Congress and Exposition (ECCE), 2019, Baltimore, MD, pp. 1926-1933.

11)L. Zhang, S. Ji, X. Huang, J. Palmer, W. Giewont, F. Wang, L. Tolbert, “Multiple-step commutation scheme for avoiding high dv/dt in modular multilevel converter with 10 kV SiC MOSFET,” IEEE Energy Conversion Congress and Exposition (ECCE), 2019, Baltimore, MD, pp. 1968-1973.

12)L. Zhang, S. Ji, S. Gu, X. Huang, J. Palmer, W. Giewont, F. Wang, L. Tolbert, “Design considerations of high-voltage-insulation gate driver power supply for 10 kV SiC MOSFET in medium-voltage application,” in IEEE Applied Power Electronics Conference and Exposition (APEC), 2019, Anaheim, CA, pp. 425-430.

13)X. Huang, S. Ji, J. Palmer, L. Zhang, L. Tolbert, F. Wang, “Parasitic capacitor’s impact on switching performance in a 10 kV SiC MOSFET based converter,” IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2018, Atlanta, GA, pp. 311-318.

14)X. Huang, S. Ji, J. Sun, S. Zheng, F. Wang, L. Tolbert, M. Laitinen, W. Giewont, “Impact of Body Diode and Anti-parallel J B S Diode on Switching Performance of 3rd Generation 10 kV SiC MOSFET,” IEEE Energy Conversion Congress and Exposition (ECCE), 2018, Portland, OR, pp. 1887-1894.

15)S. Ji, M. Laitinen, X. Huang, J. Sun, W. Giewont, L. Tolbert, F. Wang, “Short circuit characterization of 3rd generation 10 kV SiC MOSFET,” in IEEE Applied Power Electronics Conference and Exposition (APEC), San Antonio, TX, 2018.

16)S. Ji, X. Shi, Z. Zhang, W. Cao, F. Wang, “Benefits of high voltage SiC applications in medium voltage power distribution grids,” in International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington, D.C., 2017.

學術組織任職

IEEE Senior Member

IEEE PELS會員

IEEE ITRW成員

中國機械工業教育協會學科專業教學委員會委員

中國電源學會會員發展工作委員會委員

中國電源學會電磁兼容專業委員會委員

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國際期刊編委

CPSS Transactions on Power Electronics and Applications客座編輯

Engineering Reports編輯

I-Energy編輯

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國際會議任職

IEEE ECCE-Asia 2020技術委員會委員、分會場主席

IEEE Wipda-Asia 2021技術委員會委員、分會場主席